Hole mobility in Si(110) p-MOS transistors

P. Gaubert, A. Teramoto, T. Ohmi

研究成果: Conference contribution

抄録

The mobility in MOSFETs is one of the most important parameter and the need to model it into an efficient and user-friendly model has been a necessity. The most common and widely used way is to define two parameters, the low field mobility μ0 and the mobility attenuation factor θ. However, this simple model cannot be used in the case of p-MOSFETs fabricated on (110) silicon-oriented wafers since not only the surface roughness scattering but also the Coulomb and the phonon scattering mechanism must be taken into account into the model. Then, a new model has been developed to fit perfectly the hole mobility in these transistors, introducing a quadratic attenuation factor θ2 as well as a Coulomb scattering coefficient α in addition to the usual low field mobility μ0 and the conventional attenuation factor, renamed θ1.

本文言語English
ホスト出版物のタイトルECS Transactions - Solid State - General - 214th ECS Meeting/RRiME 2008
ページ7-12
ページ数6
40
DOI
出版ステータスPublished - 2009
外部発表はい
イベントSolid State - General - 214th ECS Meeting/RRiME 2008 - Honolulu, HI, United States
継続期間: 2008 10月 122008 10月 17

出版物シリーズ

名前ECS Transactions
番号40
16
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

OtherSolid State - General - 214th ECS Meeting/RRiME 2008
国/地域United States
CityHonolulu, HI
Period08/10/1208/10/17

ASJC Scopus subject areas

  • 工学(全般)

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