The paper deals with the investigation of the mobility in accumulation mode p-channel metal-oxide-semiconductor field-effect transistors (p-MOSFETs). The mobility extracted following the conventional methodology used for the inversion mode p-MOSFETs is actually incorporating a component related to the silicon-on-insulator (SOI) layer. Thus, a very simple and efficient technique to remove the contribution coming from the SOI layer has been proposed. This ultimately led to the extraction of the hole mobility of the accumulation layer. Its study carried out for several doping concentrations revealed a universal behavior similar to the one of the inversion layer. To finish, the contribution of the SOI layer to the measured mobility has been done and revealed a linear trend with the doping concentration. As a result, a simple and very efficient modeling of the mobility in the accumulation mode p-MOSFETs, incorporating the contribution of both the channel and bulk regions, has been achieved.
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