Hole mobility behavior in strained SiGe-n-SOI p-MOSFETs

Tae Hun Shim, Seong Je Kim, Gon Sub Lee, Kwan Su Kim, Won Ju Cho, Jea Gun Park

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

A compressive strained SiGe channel grown-on-SOI structure which can be applicable to next generation high performance CMOSs was applied to p-MOSFETs. The mobility behavior depending on effective fields, Eeff, was investigated by varying Ge concentrations in the SiGe layer. We confirmed that the mobility enhancement factor increases with both Ge concentration and E eff, and quite depends on Eeff. In particular, we demonstrated that hole mobility enhancement factor at the effective fields of 0.13 MV/cm amounted to 1.51 for 34 at% Ge. In addition, we observed that the strain of 0.23 induced by 56.5-at% Ge concentration in SiGe grown-on-SOI structure could not increase hole mobility at the effective fields range from 0.05 to 0.13 MV/cm because of high density of dislocations.

本文言語English
ホスト出版物のタイトルECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4
ホスト出版物のサブタイトルNew Materials, Processes, and Equipment
ページ345-350
ページ数6
1
DOI
出版ステータスPublished - 2008 11 14
外部発表はい
イベントAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 4 - Phoenix, AZ, United States
継続期間: 2008 5 182008 5 22

出版物シリーズ

名前ECS Transactions
番号1
13
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

OtherAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 4
国/地域United States
CityPhoenix, AZ
Period08/5/1808/5/22

ASJC Scopus subject areas

  • 工学(全般)

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