@inproceedings{1a3669ce9c9046108120d1a79b01ac3b,
title = "Hole mobility behavior in strained SiGe-n-SOI p-MOSFETs",
abstract = "A compressive strained SiGe channel grown-on-SOI structure which can be applicable to next generation high performance CMOSs was applied to p-MOSFETs. The mobility behavior depending on effective fields, Eeff, was investigated by varying Ge concentrations in the SiGe layer. We confirmed that the mobility enhancement factor increases with both Ge concentration and E eff, and quite depends on Eeff. In particular, we demonstrated that hole mobility enhancement factor at the effective fields of 0.13 MV/cm amounted to 1.51 for 34 at% Ge. In addition, we observed that the strain of 0.23 induced by 56.5-at% Ge concentration in SiGe grown-on-SOI structure could not increase hole mobility at the effective fields range from 0.05 to 0.13 MV/cm because of high density of dislocations.",
author = "Shim, {Tae Hun} and Kim, {Seong Je} and Lee, {Gon Sub} and Kim, {Kwan Su} and Cho, {Won Ju} and Park, {Jea Gun}",
year = "2008",
month = nov,
day = "14",
doi = "10.1149/1.2911516",
language = "English",
isbn = "9781566776264",
series = "ECS Transactions",
number = "1",
pages = "345--350",
booktitle = "ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4",
edition = "1",
note = "Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 4 ; Conference date: 18-05-2008 Through 22-05-2008",
}