Hole-ion Mixed Conduction of Orientation-Controlled BaPrO3-δ Thin Film with Mixed Valence States

Tohru Higuchi, Asuka Oda, Takashi Tsuchiya, Takaaki Suetsugu, Naoya Suzuki, Shohei Yamaguchi, Makoto Minohara, Masaki Kobayashi, Koji Horiba, Hiroshi Kumigashira

研究成果: Article査読

3 被引用数 (Scopus)

抄録

An in-plane-oriented BaPrO3-δ thin film with mixed valence states has been prepared on an Al2O3(0001) substrate by RF magnetron sputtering. With increasing crystallization temperature (Tsub), the lattice constant decreases and the orientation changes from the a-axis to the b-axis. The thin film prepared above Tsub = 800 °C exhibits a higher proton conductivity than bulk ceramics. The conductivity below 400 °C decreases with oxygen gas partial pressure, indicating the existence of hole-ion mixed conduction. The valence band consists of O 2p states hybridized with the Pr4+ (4f 0) and Pr3+ (4 f 1L) states, which are closely related to the mixed conduction. The energy difference between the top of the valence band and the Fermi level corresponds to the activation energy of holes for the total conductivity below 400 °C.

本文言語English
論文番号114708
ジャーナルjournal of the physical society of japan
84
11
DOI
出版ステータスPublished - 2015 11 15
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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