TY - JOUR
T1 - Hole-ion Mixed Conduction of Orientation-Controlled BaPrO3-δ Thin Film with Mixed Valence States
AU - Higuchi, Tohru
AU - Oda, Asuka
AU - Tsuchiya, Takashi
AU - Suetsugu, Takaaki
AU - Suzuki, Naoya
AU - Yamaguchi, Shohei
AU - Minohara, Makoto
AU - Kobayashi, Masaki
AU - Horiba, Koji
AU - Kumigashira, Hiroshi
N1 - Publisher Copyright:
© 2015 The Physical Society of Japan.
Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2015/11/15
Y1 - 2015/11/15
N2 - An in-plane-oriented BaPrO3-δ thin film with mixed valence states has been prepared on an Al2O3(0001) substrate by RF magnetron sputtering. With increasing crystallization temperature (Tsub), the lattice constant decreases and the orientation changes from the a-axis to the b-axis. The thin film prepared above Tsub = 800 °C exhibits a higher proton conductivity than bulk ceramics. The conductivity below 400 °C decreases with oxygen gas partial pressure, indicating the existence of hole-ion mixed conduction. The valence band consists of O 2p states hybridized with the Pr4+ (4f 0) and Pr3+ (4 f 1L) states, which are closely related to the mixed conduction. The energy difference between the top of the valence band and the Fermi level corresponds to the activation energy of holes for the total conductivity below 400 °C.
AB - An in-plane-oriented BaPrO3-δ thin film with mixed valence states has been prepared on an Al2O3(0001) substrate by RF magnetron sputtering. With increasing crystallization temperature (Tsub), the lattice constant decreases and the orientation changes from the a-axis to the b-axis. The thin film prepared above Tsub = 800 °C exhibits a higher proton conductivity than bulk ceramics. The conductivity below 400 °C decreases with oxygen gas partial pressure, indicating the existence of hole-ion mixed conduction. The valence band consists of O 2p states hybridized with the Pr4+ (4f 0) and Pr3+ (4 f 1L) states, which are closely related to the mixed conduction. The energy difference between the top of the valence band and the Fermi level corresponds to the activation energy of holes for the total conductivity below 400 °C.
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U2 - 10.7566/JPSJ.84.114708
DO - 10.7566/JPSJ.84.114708
M3 - Article
AN - SCOPUS:84946761649
VL - 84
JO - Journal of the Physical Society of Japan
JF - Journal of the Physical Society of Japan
SN - 0031-9015
IS - 11
M1 - 114708
ER -