Hole concentration dependence of the Curie temperature of (Ga,Mn)Sb in a field-effect structure

Hsiao Wen Chang; Shingo Akita; Fumihiro Matsukura; Hideo Ohno

doi:10.1063/1.4823592

Hole concentration dependence of the Curie temperature of (Ga,Mn)Sb in a field-effect structure

Hsiao Wen Chang, Shingo Akita, Fumihiro Matsukura, Hideo Ohno

研究成果: Article › 査読

6 被引用数 (Scopus)

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We investigate magnetotransport properties of thin (Ga,Mn)Sb layers in a field-effect structure. By changing the hole concentration p in the channel by applied electric fields, we establish the relationship between the Curie temperature T_C and p, which shows γ of 1.3-1.6 in T_C p^γ. The exponent γ is several times larger than γ ∼ 0.2 reported previously for (Ga,Mn)As. Analyses based on the p-d Zener model taking into account of non-uniform hole distribution in the channel shows that the lager γ is explained by the presence of hole accumulation at the interface of (Ga,Mn)Sb and the gate insulator.

本文言語	English
論文番号	142402
ジャーナル	Applied Physics Letters
巻	103
号	14
DOI	https://doi.org/10.1063/1.4823592
出版ステータス	Published - 2013 9月 30

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.4823592

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title = "Hole concentration dependence of the Curie temperature of (Ga,Mn)Sb in a field-effect structure",

abstract = "We investigate magnetotransport properties of thin (Ga,Mn)Sb layers in a field-effect structure. By changing the hole concentration p in the channel by applied electric fields, we establish the relationship between the Curie temperature TC and p, which shows γ of 1.3-1.6 in TC pγ. The exponent γ is several times larger than γ ∼ 0.2 reported previously for (Ga,Mn)As. Analyses based on the p-d Zener model taking into account of non-uniform hole distribution in the channel shows that the lager γ is explained by the presence of hole accumulation at the interface of (Ga,Mn)Sb and the gate insulator.",

author = "{Wen Chang}, Hsiao and Shingo Akita and Fumihiro Matsukura and Hideo Ohno",

note = "Funding Information: The authors thank Y. Nishitani, M. Sawicki, and T. Dietl for discussion. This work was supported in part by JSPS through the FIRST program as well as R&D for Next-Generation IT of MEXT. H.W.C. acknowledges National Science Council of Taiwan (Grant No. NSC-101-2911-I-110-502-) for supporting her stay at Tohoku University as a visiting student.",

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doi = "10.1063/1.4823592",

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T1 - Hole concentration dependence of the Curie temperature of (Ga,Mn)Sb in a field-effect structure

AU - Wen Chang, Hsiao

AU - Akita, Shingo

AU - Matsukura, Fumihiro

AU - Ohno, Hideo

N1 - Funding Information: The authors thank Y. Nishitani, M. Sawicki, and T. Dietl for discussion. This work was supported in part by JSPS through the FIRST program as well as R&D for Next-Generation IT of MEXT. H.W.C. acknowledges National Science Council of Taiwan (Grant No. NSC-101-2911-I-110-502-) for supporting her stay at Tohoku University as a visiting student.

PY - 2013/9/30

Y1 - 2013/9/30

N2 - We investigate magnetotransport properties of thin (Ga,Mn)Sb layers in a field-effect structure. By changing the hole concentration p in the channel by applied electric fields, we establish the relationship between the Curie temperature TC and p, which shows γ of 1.3-1.6 in TC pγ. The exponent γ is several times larger than γ ∼ 0.2 reported previously for (Ga,Mn)As. Analyses based on the p-d Zener model taking into account of non-uniform hole distribution in the channel shows that the lager γ is explained by the presence of hole accumulation at the interface of (Ga,Mn)Sb and the gate insulator.

AB - We investigate magnetotransport properties of thin (Ga,Mn)Sb layers in a field-effect structure. By changing the hole concentration p in the channel by applied electric fields, we establish the relationship between the Curie temperature TC and p, which shows γ of 1.3-1.6 in TC pγ. The exponent γ is several times larger than γ ∼ 0.2 reported previously for (Ga,Mn)As. Analyses based on the p-d Zener model taking into account of non-uniform hole distribution in the channel shows that the lager γ is explained by the presence of hole accumulation at the interface of (Ga,Mn)Sb and the gate insulator.

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DO - 10.1063/1.4823592

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JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 14

M1 - 142402

ER -

Hole concentration dependence of the Curie temperature of (Ga,Mn)Sb in a field-effect structure

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