High‐Temperature Active Oxidation of Chemically Vapor‐Deposited Silicon Carbide in CO─CO2 Atmosphere

Takayuki Narushima, Takashi Goto, Yoshio Yokoyama, Yasutaka Iguchi, Toshio Hirai

研究成果: Article

39 引用 (Scopus)

抜粋

Active oxidation behavior of CVD‐SiC in CO─CO2 atmospheres was investigated using a thermogravimetric technique in the temperature range between 1823 and 1923 K. The gas pressure ratio, PCO2/PCO, was controlled between 10−4 and 10−1 at 0.1 MPa. Active oxidation rates (mass loss rates) showed maxima at a certain value of PCO2/PCO, (PCO2/PCO)*, In a PCO2/PCO region lower than the (PCO2/PCO)* a carbon layer was formed on the SiC surface. In a PCO2/PCO region higher than the (PCO2/PCO)*, silica particles or a porous silica layer was observed on the SiC surface.

元の言語English
ページ(範囲)2521-2524
ページ数4
ジャーナルJournal of the American Ceramic Society
76
発行部数10
DOI
出版物ステータスPublished - 1993 10

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

フィンガープリント High‐Temperature Active Oxidation of Chemically Vapor‐Deposited Silicon Carbide in CO─CO<sub>2</sub> Atmosphere' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用