Highly Vt tunable and low variability triangular fin-channel MOSFETs on SOTB

Y. X. Liu, T. Matsukawa, K. Endo, S. O'uchi, J. Tsukada, H. Yamauchi, Y. Ishikawa, W. Mizubayashi, Y. Morita, S. Migita, H. Ota, M. Masahara

研究成果: Article査読

抄録

Abstract Triangular fin (Tri-Fin) channel double-gate (DG) MOSFETs were successfully fabricated on (1 0 0) SOTB wafers using orientation dependent wet etching, and their electrical characteristics were systematically compared to the rectangular fin (Rec-Fin) ones by RIE. Thanks to the wide bottom area and the suppressed line edge roughness of Tri-Fins by the wet process, a higher threshold voltage (Vt) tunability and a smaller Vt variation were obtained as compared to the Rec-Fin ones. Moreover, the wet processed Tri-Fin devices provide a damage-free BOX layer, which is useful for the fabrication of multiple Vt devices with an ultrathin BOX layer.

本文言語English
論文番号9898
ページ(範囲)290-293
ページ数4
ジャーナルMicroelectronic Engineering
147
DOI
出版ステータスPublished - 2015 11 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 凝縮系物理学
  • 表面、皮膜および薄膜
  • 電子工学および電気工学

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