Highly stable, extremely high-temperature, nonvolatile memory based on resistance switching in polycrystalline Pt nanogaps

Hiroshi Suga, Hiroya Suzuki, Yuma Shinomura, Shota Kashiwabara, Kazuhito Tsukagoshi, Tetsuo Shimizu, Yasuhisa Naitoh

研究成果: Article査読

9 被引用数 (Scopus)

抄録

Highly stable, nonvolatile, high-temperature memory based on resistance switching was realized using a polycrystalline platinum (Pt) nanogap. The operating temperature of the memory can be drastically increased by the presence of a sharp-edged Pt crystal facet in the nanogap. A short distance between the facet edges maintains the nanogap shape at high temperature, and the sharp shape of the nanogap densifies the electric field to maintain a stable current flow due to field migration. Even at 873 K, which is a significantly higher temperature than feasible for conventional semiconductor memory, the nonvolatility of the proposed memory allows stable ON and OFF currents, with fluctuations of less than or equal to 10%, to be maintained for longer than eight hours. An advantage of this nanogap scheme for high-temperature memory is its secure operation achieved through the assembly and disassembly of a Pt needle in a high electric field.

本文言語English
論文番号34961
ジャーナルScientific reports
6
DOI
出版ステータスPublished - 2016 10月 11
外部発表はい

ASJC Scopus subject areas

  • 一般

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