We have developed and evaluated SiO2 films formed in a dry oxygen ambient at 600-900°C under ultraviolet irradiation (UV-O2 oxidation). It has been found that the constant current time-dependent-dielectric-breakdown (TDDB), stress induced leakage current and the hole-trapping characteristics of SiO2 films formed by the UV-O2 oxidation at 900°C, are superior to those formed by the conventional dry oxidation. The TDDB lifetime of the SiO2 films formed by the UV-O2 oxidation at 600°C is also longer than that formed by the conventional dry oxidation at 900°C and wet oxidation at 600°C. These facts indicate that the highly reliable gate oxide is realized by the UV-O2 oxidation. The UV-O2 oxidation technology is very useful for the production of future devices which require low-temperature processing.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|発行部数||3 SUPPL. B|
|出版物ステータス||Published - 1998 3|
ASJC Scopus subject areas
- Physics and Astronomy(all)