This paper examines a detailed analysis by Shubnikov-de Haas measurements of the effective mass of two-dimensinal electron gas (2DEG) in an In0.52Al0.48As/ In0.53Ga0.47As modulation-doped (MD) structure with an InAs quantum well inserted into the InGaAs channel (InAs-inserted channel). The measured effective mass of 2DEG in the InAs-inserted-channel MD structure is in good agreement with the calculated one of the strained InAs layer on In0.53Ga0.47As. This indicates that almost all of the 2DEG forms in the strained InAs quantum well. These results show that the InAs-inserted-channel MD structure improves the electron confinement, since the 2DEG is confined in the InAs quantum well with the thickness of 4 nm.
|ジャーナル||Journal of Electronic Materials|
|出版ステータス||Published - 1996 4|
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