High-throughput screening of Si-Ni flux for SiC solution growth using a high-temperature laser microscope observation and secondary ion mass spectroscopy depth profiling

Shingo Maruyama, Aomi Onuma, Kazuhisa Kurashige, Tomohisa Kato, Hajime Okumura, Yuji Matsumoto

研究成果: Article査読

6 被引用数 (Scopus)

抄録

Screening of Si-based flux materials for solution growth of SiC single crystals was demonstrated using a thin film composition-spread technique. The reactivity and diffusion of carbon in a composition spread of the flux was investigated by secondary ion mass spectroscopy depth profiling of the annealed flux thin film spread on a graphite substrate. The composition dependence of the chemical interaction between a seed crystal and flux materials was revealed by high-temperature thermal behavior observation of the flux and the subsequent morphological study of the surface after removing the flux using atomic force microscopy. Our new screening approach is shown to be an efficient process for understanding flux materials for SiC solution growth.

本文言語English
ページ(範囲)287-290
ページ数4
ジャーナルACS Combinatorial Science
15
6
DOI
出版ステータスPublished - 2013 6 10
外部発表はい

ASJC Scopus subject areas

  • Chemistry(all)

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