A study was conducted to perform high-throughput electrode exploration to determine the appropriate structure of resistance-switching memory devices. Farication of several types of metal electrodes on an epitaxial Pr 0Ca0.3MnO3 (PCMO) layer and I-V characterization of electrode pairs were carried out, using combinatorial methodology. The methodology ensured a rapid screening of the resistance-switching effect from many combinations of different materials. Epitaxial PCMO thin films were grown on LaAlO3(100) (LAO) single crystal substrates by pulsed laser deposition (PLD). Growth of the epitaxial PCMO thin film was confirmed by four-circle X-ray diffraction (4cXRD) measurements. Detailed analysis of the 4cXRD pattern revealed that the PCMO thin film was compressively strained on the LAO substrate.
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