High-throughput characterization of metal electrode performance for electric-field-induced resistance switching in metal/Pr0.7Ca 0.3MnO3/metal structures

Kenta Tsubouchi, Isao Ohkubo, Hiroshi Kumigashira, Masaharu Oshima, Yuji Matsumoto, Kenji Itaka, Tsuyoshi Ohnishi, Mikk Lippmaa, Hideomi Koinuma

研究成果: Article査読

80 被引用数 (Scopus)

抄録

A study was conducted to perform high-throughput electrode exploration to determine the appropriate structure of resistance-switching memory devices. Farication of several types of metal electrodes on an epitaxial Pr 0Ca0.3MnO3 (PCMO) layer and I-V characterization of electrode pairs were carried out, using combinatorial methodology. The methodology ensured a rapid screening of the resistance-switching effect from many combinations of different materials. Epitaxial PCMO thin films were grown on LaAlO3(100) (LAO) single crystal substrates by pulsed laser deposition (PLD). Growth of the epitaxial PCMO thin film was confirmed by four-circle X-ray diffraction (4cXRD) measurements. Detailed analysis of the 4cXRD pattern revealed that the PCMO thin film was compressively strained on the LAO substrate.

本文言語English
ページ(範囲)1711-1713
ページ数3
ジャーナルAdvanced Materials
19
13
DOI
出版ステータスPublished - 2007 7 2
外部発表はい

ASJC Scopus subject areas

  • 材料科学(全般)
  • 材料力学
  • 機械工学

フィンガープリント

「High-throughput characterization of metal electrode performance for electric-field-induced resistance switching in metal/Pr<sub>0.7</sub>Ca <sub>0.3</sub>MnO<sub>3</sub>/metal structures」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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