抄録
A study was conducted to perform high-throughput electrode exploration to determine the appropriate structure of resistance-switching memory devices. Farication of several types of metal electrodes on an epitaxial Pr 0Ca0.3MnO3 (PCMO) layer and I-V characterization of electrode pairs were carried out, using combinatorial methodology. The methodology ensured a rapid screening of the resistance-switching effect from many combinations of different materials. Epitaxial PCMO thin films were grown on LaAlO3(100) (LAO) single crystal substrates by pulsed laser deposition (PLD). Growth of the epitaxial PCMO thin film was confirmed by four-circle X-ray diffraction (4cXRD) measurements. Detailed analysis of the 4cXRD pattern revealed that the PCMO thin film was compressively strained on the LAO substrate.
本文言語 | English |
---|---|
ページ(範囲) | 1711-1713 |
ページ数 | 3 |
ジャーナル | Advanced Materials |
巻 | 19 |
号 | 13 |
DOI | |
出版ステータス | Published - 2007 7月 2 |
外部発表 | はい |
ASJC Scopus subject areas
- 材料科学(全般)
- 材料力学
- 機械工学