High temperature passive oxidation mechanism of CVD SiC

Takashi Goto

研究成果: Conference contribution

10 被引用数 (Scopus)

抄録

The passive oxidation mechanism of CVD SiC was discussed from experimental results with high-temperature thermogravimetry and thermodynamic analyses. The bubble formation temperature around 1900 K could be too low for an oxygen inward diffusion limited process but conform to a CO outward diffusion limited process. The parabolic rate constant (kp) had weak oxygen partial pressure (PO2) dependence, kp ∝ PO2n where n = 0.09 to 0.12. These n values may be consistent with the CO outward diffusion limited process. The activation energy of kp obtained in the present study, 210 kJ/mol, could suggest a different mechanism from the well-approved oxygen molecule permeation limited process at lower temperatures below 1600 K. Amorphous phase was significantly contained in SiO2 scales formed in an N 2-O2 atmosphere. No effect of the amorphous formation on kp was identified.

本文言語English
ホスト出版物のタイトルHigh-Temperature Oxidation and Corrosion 2005 - Proceedings of the International Symposium on High-Temperature Oxidation and Corrosion 2005
出版社Trans Tech Publications Ltd
ページ27-36
ページ数10
ISBN(印刷版)9780878494095
DOI
出版ステータスPublished - 2006 1月 1
イベントInternational Symposium on High-Temperature Oxidation and Corrosion, ISHOC-05 - Nara, Japan
継続期間: 2005 11月 302005 12月 2

出版物シリーズ

名前Materials Science Forum
522-523
ISSN(印刷版)0255-5476
ISSN(電子版)1662-9752

Other

OtherInternational Symposium on High-Temperature Oxidation and Corrosion, ISHOC-05
国/地域Japan
CityNara
Period05/11/3005/12/2

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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