High-temperature creep resistance in rare-earth-doped, fine-grained Al2O3

H. Yoshida, Y. Ikuhara, T. Sakuma

    研究成果: Article査読

    118 被引用数 (Scopus)

    抄録

    High-temperature creep in undoped Al2O3 and La2O3- or Y2O3- or Lu2O3-doped Al2O3 with a grain size of about 1 μm is examined in uniaxial compression testing at temperatures between 1150 and 1350°C. The high-temperature creep resistance in Al2O3 is highly improved by the rare-earth oxide doping in the level of 0.045 mol %, and the creep rate is suppressed in the order La2O3 < Y2O3 < Lu2O3. Rare-earth ions in each doped Al2O3 are found to segregate in Al2O3 grain boundaries without forming amorphous phase or second-phase particles. The activation energy for creep in undoped Al2O3 is estimated to be 410 kJ/mol, while it is about 800 kJ/mol in the three rare-earth oxide-doped Al2O3. The grain boundary diffusivity must be highly reduced by the segregation of the dopant cation in Al2O3 grain boundaries.

    本文言語English
    ページ(範囲)2597-2601
    ページ数5
    ジャーナルJournal of Materials Research
    13
    9
    DOI
    出版ステータスPublished - 1998 9

    ASJC Scopus subject areas

    • 材料科学(全般)
    • 凝縮系物理学
    • 材料力学
    • 機械工学

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