High spin-torque diode sensitivity in CoFeB/MgO/CoFeB magnetic tunnel junctions under DC bias currents

Shota Ishibashi, Ken Ando, Takeshi Seki, Takayuki Nozaki, Hitoshi Kubota, Satoshi Yakata, Hiroki Maehara, Akio Fukushima, Shinji Yuasa, Yoshishige Suzuki

研究成果: Article査読

13 被引用数 (Scopus)

抄録

We report a large enhancement of spin-torque diode sensitivity in CoFeB/MgO/CoFeB magnetic tunnel junctions measured under perpendicular magnetic fields and dc bias currents. In the measurement of homodyne detection, a large dc output voltage of 190 μ V was obtained when an RF signal power of -30 dB·m and a dc current of +1.0 mA were applied. This value corresponds to the diode sensitivity of 190 mV/mW (260 mV/mW after impedance matching correction). The main origin of this enhancement is an offset of the damping torque and an increase in the precession angle induced by the spin-transfer torque due to the dc bias current application.

本文言語English
論文番号6028146
ページ(範囲)3373-3376
ページ数4
ジャーナルIEEE Transactions on Magnetics
47
10
DOI
出版ステータスPublished - 2011 10
外部発表はい

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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