High-speed resonant tunneling flip-flop circuit employing a monostable-bistable transition logic element (MOBILE) with an SCFL-type output buffer

Koichi Maezawa, Hideaki Matsuzaki, Jiro Osaka, Haruki Yokoyama, Masafumi Yamamoto, Taiichi Otsuji

研究成果: Conference article査読

3 被引用数 (Scopus)

抄録

A resonant tunneling flip-flop circuit was fabricated based on a monostable-bistable transition logic element (MOBILE). In this work, an SCFL-type output buffer and depletion-mode HEMTs were employed differently than in previous studies. A practical output voltage level close to the SCFL interface was first demonstrated with a MOBILE circuit operating at a high bit rate of up to 20 Gb/s. This indicates that the MOBILE has sufficient current drivability. Another advantage of employing an SCFL output buffer is also described. This is, that D-HEMTs fabricated with precise gate-recess technology using an InP etch stopper can be used for MOBILEs. Good uniformity of the device parameters of the HEMTs and the RTDs were obtained simultaneously with this implementation. These results indicate the promise of using the MOBILE circuit in practical applications.

本文言語English
ページ(範囲)415-418
ページ数4
ジャーナルConference Proceedings - International Conference on Indium Phosphide and Related Materials
出版ステータスPublished - 1998 12月 1
外部発表はい
イベントProceedings of the 1998 International Conference on Indium Phosphide and Related Materials - Tsukuba, Jpn
継続期間: 1998 5月 111998 5月 15

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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