High-speed pulse response of asymmetric-dual-grating-gate high-electron-mobility-transistor for plasmonic THz detection

T. Hosotani, F. Kasuya, M. Suzuki, T. Suemitsu, T. Otsuji, Y. Takida, H. Ito, H. Minamide, T. Ishibashi, M. Shimizu, A. Satou

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

Asymmetric-dual-grating-gate high-electron-mobility-transistors (ADGG-HEMTs) are expected for on-chip, sensitive, room-temperature operating, high-speed THz detectors. In this paper, we experimentally verify the high-speed response of an ADGG-HEMT by measuring its response to THz pulse generated from an injection-seeded THz-wave parametric generator (is-TPG). From the pulse response waveform of the output photovoltage signal, it is demonstrated that the response time of the detector at least as fast as 100 ps.

本文言語English
ホスト出版物のタイトル2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017
出版社IEEE Computer Society
ISBN(電子版)9781509060481
DOI
出版ステータスPublished - 2017 10 12
イベント42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017 - Cancun, Quintana Roo, Mexico
継続期間: 2017 8 272017 9 1

出版物シリーズ

名前International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
ISSN(印刷版)2162-2027
ISSN(電子版)2162-2035

Other

Other42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017
CountryMexico
CityCancun, Quintana Roo
Period17/8/2717/9/1

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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