High-speed operation of a resonant tunneling flip-flop circuit employing a MOBILE (monostable-bistable transition logic element)

Koichi Maezawa, Hideaki Matsuzaki, Kunihiro Arai, Taiichi Otsuji, Masafumi Yamamoto

研究成果: Paper査読

10 被引用数 (Scopus)

抄録

The high-speed operation of the monostable-bistable transition logic element (MOBILE) flip-flop (FF) circuit at room temperature is presented. This circuit consists of two serially connected negative differential resistance (NDR) devices capable of peak current modulation. The oscillatory varying bias voltage produces the mono-to-bistable transition and works as a clock signal. A small difference in the peak current between the two-NDR devices determines the circuit's state after transition. This indicates the promise of MOBILE-based FF circuits for high-speed digital applications.

本文言語English
ページ94-95
ページ数2
出版ステータスPublished - 1997 1月 1
外部発表はい
イベントProceedings of the 1997 55th Annual Device Research Conference - Fort Collins, CO, USA
継続期間: 1997 6月 231997 6月 25

Other

OtherProceedings of the 1997 55th Annual Device Research Conference
CityFort Collins, CO, USA
Period97/6/2397/6/25

ASJC Scopus subject areas

  • 工学(全般)

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