High-speed epitaxial growth of (100)-oriented CeO2 film on r-cut sapphire by laser chemical vapor deposition

Pei Zhao, Akihiko Ito, Rong Tu, Takashi Goto

研究成果: Article査読

15 被引用数 (Scopus)

抄録

(100)-oriented CeO2 film was prepared on r-cut sapphire ((11̄02)Al2O3) by laser chemical vapor deposition at laser powers from 123 to 182W with deposition temperatures ranging from 1042 to 1122K. The (100) CeO2 films grew epitaxially on (11̄02)Al2O3 substrate with the in-plane orientation relationship of CeO2 [010] // Al2O3 [1̄101] and CeO2 [001] // Al2O3 [112̄0]. The surface morphology of the CeO2 films was characterized by elongated grains with truncated pyramidal cap. The deposition rate of the CeO2 film was 10-15μmh-1, about 10-15 times higher than those of conventional metalorganic CVD.

本文言語English
ページ(範囲)4079-4082
ページ数4
ジャーナルSurface and Coatings Technology
205
16
DOI
出版ステータスPublished - 2011 5 15

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜
  • 材料化学

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