High-speed deposition of SiC thick film by halide precursor

Mingxu Han, Wei Zhou, Dingheng Zheng, Rong Tu, Song Zhang, Takashi Goto

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

Polycrystalline β-SiC thick film with mm-scaled thickness was deposited on a graphite substrate using a gaseous mixture of SiCl4 + CH4 and H2 at temperatures ranging from 1573 to 1823 K by chemical vapor deposition. Effect of deposition temperature (Tdep) on deposition rate, surface morphology and preferred orientation has been studied. The preferred orientation changed from <111> to <110> with increasing Tdep. The maximum deposition rate (Rdep) of 1125 μm h-1 has been obtained. The surface morphology has changed from six-fold pyramid to five-fold facet with increasing Tdep.

本文言語English
ホスト出版物のタイトルAdvanced Ceramics and Novel Processing
出版社Trans Tech Publications Ltd
ページ37-42
ページ数6
ISBN(印刷版)9783038351306
DOI
出版ステータスPublished - 2014
イベント5th International Symposium on Advanced Ceramics, ISAC 2013 and 3rd International Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2013 - Wuhan, China
継続期間: 2013 12 92013 12 12

出版物シリーズ

名前Key Engineering Materials
616
ISSN(印刷版)1013-9826
ISSN(電子版)1662-9795

Other

Other5th International Symposium on Advanced Ceramics, ISAC 2013 and 3rd International Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2013
CountryChina
CityWuhan
Period13/12/913/12/12

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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