High-speed deposition of oriented TiNx films by laser metal-organic chemical vapor deposition

Yan Sheng Gong, Rong Tu, Takashi Goto

研究成果: Article査読

1 被引用数 (Scopus)

抄録

TiNx films were prepared on Al2O3 substrates by laser chemical vapor deposition (LCVD). The effects of laser power (PL), pre-heatment temperature (Tpre) and total pressure in the main chamber (Ptot) on the orientation and deposition rate (Rdep) of TiNx films were investigated. The deposited TiNx films were characterized by X-ray diffraction (XRD), atomic emission spectrometry (AES) and field emission scanning electron microscope (FESEM). The results showed that the composition in TiNx films was uniform, and the orientation was relative to the Tpre, which changed from (111) to (200) orientation with increasing Tpre. The orientation was consistent with its microstructure. The Rdep of TiNx films increased with increasing PL, showing a maximum (90μm/h) at PL = 100W at a deposition area of about 300mm2, which was higher than that of TiNx films prepared by other methods.

本文言語English
ページ(範囲)391-395
ページ数5
ジャーナルWuji Cailiao Xuebao/Journal of Inorganic Materials
25
4
DOI
出版ステータスPublished - 2010 4月 1

ASJC Scopus subject areas

  • 材料科学(全般)
  • 無機化学

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