High-speed and highly accurate evaluation of electrical characteristics in MOSFETs

Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

研究成果: Conference contribution

4 被引用数 (Scopus)

抄録

Threshold voltage variability, random telegraph signal, and leakage current of gate oxides and pn junctions of numerous MOSFETs are evaluated by the array test circuits. By converting from current signal of MOSFETs to the voltage signal in the test circuit, accurate and high speed measurement can be obtained. These numerous data of variability, noise, and leakage current caused by the defects in MOSFETs are very useful for the process development and constructing the device structures.

本文言語English
ホスト出版物のタイトルICICDT 2013 - International Conference on IC Design and Technology, Proceedings
ページ187-190
ページ数4
DOI
出版ステータスPublished - 2013 9 9
イベント2013 International Conference on IC Design and Technology, ICICDT 2013 - Pavia, Italy
継続期間: 2013 5 292013 5 31

出版物シリーズ

名前ICICDT 2013 - International Conference on IC Design and Technology, Proceedings

Other

Other2013 International Conference on IC Design and Technology, ICICDT 2013
CountryItaly
CityPavia
Period13/5/2913/5/31

ASJC Scopus subject areas

  • Hardware and Architecture

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