High-Sensitivity Charge Detection with a Single-Lead Quantum Dot for Scalable Quantum Computation

M. G. House, I. Bartlett, P. Pakkiam, M. Koch, E. Peretz, J. Van Der Heijden, T. Kobayashi, S. Rogge, M. Y. Simmons

研究成果: Article

10 引用 (Scopus)

抜粋

We report the development of a high-sensitivity semiconductor charge sensor based on a quantum dot coupled to a single lead designed to minimize the geometric requirements of a charge sensor for scalable quantum-computing architectures. The quantum dot is fabricated in Si:P using atomic precision lithography, and its charge transitions are measured with rf reflectometry. A second quantum dot with two leads placed 42 nm away serves as both a charge for the sensor to measure and as a conventional rf single-electron transistor (rf SET) with which to make a comparison of the charge-detection sensitivity. We demonstrate sensitivity equivalent to an integration time of 550 ns to detect a single charge with a signal-to-noise ratio of 1 compared with an integration time of 55 ns for the rf SET. This level of sensitivity is suitable for fast (<15 μs) single-spin readout in quantum-information applications, with a significantly reduced geometric footprint compared to the rf SET.

元の言語English
記事番号044016
ジャーナルPhysical Review Applied
6
発行部数4
DOI
出版物ステータスPublished - 2016 10 25

ASJC Scopus subject areas

  • Physics and Astronomy(all)

フィンガープリント High-Sensitivity Charge Detection with a Single-Lead Quantum Dot for Scalable Quantum Computation' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用

    House, M. G., Bartlett, I., Pakkiam, P., Koch, M., Peretz, E., Van Der Heijden, J., Kobayashi, T., Rogge, S., & Simmons, M. Y. (2016). High-Sensitivity Charge Detection with a Single-Lead Quantum Dot for Scalable Quantum Computation. Physical Review Applied, 6(4), [044016]. https://doi.org/10.1103/PhysRevApplied.6.044016