High-resolution scanning electron microscopy observation of electrochemical etching in the formation of gate grooves for InP-based modulation-doped field-effect transistors

Dong Xu, Takatomo Enoki, Tetsuya Suemitsu, Yasunobu Ishii

研究成果: Article査読

抄録

We show that during the wet-chemical formation of gate grooves for InAlAs/InGaAs-heterojunction-based modulation-doped field-effect transistors, the etching rates of InGaAs and InAlAs can be significantly modified by the exposure of the non-alloyed ohmic electrodes to citric-acid-based etchant. The presence of a Ni surface metal enhances the recess etching rate to a degree that is much higher than that in its absence. The presence of a Pt surface metal, however, causes this originally nonselective etchant to preferentially etch InGaAs over InAlAs. This selective etching behavior is attributed to the excess oxidation of InAlAs induced by the high electrode potential of Pt via an electrochemical effect. This study reveals the important impacts of electrochemical etching on the fabrication of gate recess grooves.

本文言語English
ページ(範囲)1182-1185
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
38
2 B
出版ステータスPublished - 1999 12 1
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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