High Resolution Observation of Subsurface Defects at SiO2/4H-SiC Interfaces by Local Deep Level Transient Spectroscopy Based on Time-Resolved Scanning Nonlinear Dielectric Microscopy

Yuji Yamagishi, Yasuo Cho

研究成果: Conference contribution

抄録

High resolution observation of density of interface states (Dit) at SiO2/4H-SiC interfaces was performed by local deep level transient spectroscopy based on time-resolved scanning nonlinear dielectric microscopy (tr-SNDM). The sizes of the non-uniform contrasts observed in the map of Dit were in the order of several tens of nanometers, which are smaller than the value reported in the previous study (>100 nm). The simulation of the tr-SNDM measurement suggested that the spatial resolution of tr-SNDM is down to the tip radius of the cantilever used for the measurement and can be smaller than the lateral spread of the depletion layer width.

本文言語English
ホスト出版物のタイトル2019 IEEE International Reliability Physics Symposium, IRPS 2019
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781538695043
DOI
出版ステータスPublished - 2019 5月 22
イベント2019 IEEE International Reliability Physics Symposium, IRPS 2019 - Monterey, United States
継続期間: 2019 3月 312019 4月 4

出版物シリーズ

名前IEEE International Reliability Physics Symposium Proceedings
2019-March
ISSN(印刷版)1541-7026

Conference

Conference2019 IEEE International Reliability Physics Symposium, IRPS 2019
国/地域United States
CityMonterey
Period19/3/3119/4/4

ASJC Scopus subject areas

  • 工学(全般)

フィンガープリント

「High Resolution Observation of Subsurface Defects at SiO2/4H-SiC Interfaces by Local Deep Level Transient Spectroscopy Based on Time-Resolved Scanning Nonlinear Dielectric Microscopy」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル