TY - JOUR
T1 - High resolution LAPS using amorphous silicon as the semiconductor material
AU - Moritz, Werner
AU - Yoshinobu, Tatsuo
AU - Finger, Friedhelm
AU - Krause, Steffi
AU - Martin-Fernandez, Marisa
AU - Schöning, Michael J.
PY - 2004/9/29
Y1 - 2004/9/29
N2 - The lateral resolution of photocurrent techniques such as light-addressable potentiometric sensors (LAPS) or scanning photo-induced impedance microscopy (SPIM) is limited by the properties of the semiconductor material used. We investigated metal-insulator-semiconductor (MIS) structures based on amorphous silicon (a-Si) prepared as a thin layer on transparent glass substrates. It was shown that a sub-micrometer resolution can be achieved for this material, which is much better than the results for single crystalline Si. Some limitations caused by light scattering in the structure were observed.
AB - The lateral resolution of photocurrent techniques such as light-addressable potentiometric sensors (LAPS) or scanning photo-induced impedance microscopy (SPIM) is limited by the properties of the semiconductor material used. We investigated metal-insulator-semiconductor (MIS) structures based on amorphous silicon (a-Si) prepared as a thin layer on transparent glass substrates. It was shown that a sub-micrometer resolution can be achieved for this material, which is much better than the results for single crystalline Si. Some limitations caused by light scattering in the structure were observed.
KW - Amorphous Si
KW - LAPS
KW - Photocurrent
KW - Semiconductor
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U2 - 10.1016/j.snb.2004.04.073
DO - 10.1016/j.snb.2004.04.073
M3 - Article
AN - SCOPUS:14744282675
SN - 0925-4005
VL - 103
SP - 436
EP - 441
JO - Sensors and Actuators B: Chemical
JF - Sensors and Actuators B: Chemical
IS - 1-2
ER -