High resolution imaging of electrical properties of a 2-inch-diameter gallium nitride wafer using frequency-agile terahertz waves

Akihide Hamano, Seigo Ohno, Hiroaki Minamide, Hiromasa Ito, Yoshiyuki Usuki

研究成果: Article査読

7 被引用数 (Scopus)

抄録

The reflective spectra of n-type gallium nitride (GaN) samples with various carrier concentrations have been measured in the terahertz region. We observed the different reflective spectra by changing the carrier concentration. The Drude Lorentz model explained well the measured spectra influenced by free carrier effects. In order to obtain electrical properties of the carrier concentration, mobility, and electrical resistivity, we used two terahertz waves generated by a frequency-agile source. Image mapping of these electrical properties on a 2-in.-diameter GaN wafer was demonstrated with a high resolution of 1 × 1 mm2.

本文言語English
論文番号022402
ジャーナルJapanese journal of applied physics
49
2 Part 1
DOI
出版ステータスPublished - 2010 2月 1
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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