High-resolution electron microscopy of short-range ordered structure of Ga0.5In0.5P

Daisuke Shindo, Kenji Hiraga, Sumio Iijima, Junichi Kudoh, Yoshiaki Nemoto, Tetsuo Oikawa

研究成果: Article査読

13 被引用数 (Scopus)

抄録

A short-range ordered structure of a semiconductor laser material Gao.5Ino.5P was investigated by high-resolution electron microscopy together with electron diffraction. A high-resolution electron microscope image of Ga0.5In0.5P was processed to visualize a short-range ordered atomic arrangement. A model of the short-range ordered structure was obtained by assuming the proportionality between the brightness of white dots in the image and the concentration of In in atomic columns parallel to the incident electron beam. Based on the structure model, diffuse scattering intensity was calculated and it was compared with the observed diffraction pattern.

本文言語English
ページ(範囲)227-230
ページ数4
ジャーナルJournal of Electron Microscopy
42
4
出版ステータスPublished - 1993 8月
外部発表はい

ASJC Scopus subject areas

  • 器械工学

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