High-resolution angle-resolved photoemission study of quasi-one-dimensional semiconductor In₄Se₃

We present a comprehensive characterization of the electronic structure of anisotropic layered semiconductor In₄Se₃ by means of high-resolution angle-resolved photoemission spectroscopy. Our study reveals the quasi-one-dimensionality in the electronic structure of In₄Se₃ and provides a direct estimate of its band gap (0.86 ± 0.05 eV). The identification of the quasi-one-dimensional electronic structure gives new insights into the electronic contribution to the high thermoelectric figure of merit of In₄Se₃.