High-resolution angle-resolved photoemission study of quasi-one-dimensional semiconductor In4Se3

Keisuke Fukutani, Yasunari Miyata, Idea Matsuzaki, Pavlo V. Galiy, Peter A. Dowben, Takafumi Sato, Takashi Takahashi

研究成果: Article査読

12 被引用数 (Scopus)

抄録

We present a comprehensive characterization of the electronic structure of anisotropic layered semiconductor In4Se3 by means of high-resolution angle-resolved photoemission spectroscopy. Our study reveals the quasi-one-dimensionality in the electronic structure of In4Se3 and provides a direct estimate of its band gap (0.86 ± 0.05 eV). The identification of the quasi-one-dimensional electronic structure gives new insights into the electronic contribution to the high thermoelectric figure of merit of In4Se3.

本文言語English
論文番号074710
ジャーナルjournal of the physical society of japan
84
7
DOI
出版ステータスPublished - 2015 7月 15

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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