High-resolution angle-resolved photoemission study of layered transition-metal dichalcogenides Nb1-xTixXc2 (Xc = S, Se, Te)

T. Sato, H. Komatsu, K. Terashima, T. Takahashi, M. Shimakawa, K. Hayashi

研究成果: Article査読

2 被引用数 (Scopus)

抄録

High-resolution angle-resolved photoemission spectroscopy (ARPES) has been performed on Nb1-xTixXc2 (Xc = S, Se, Te) to elucidate the change in the band structure as a function of x and Xc. We found that spectral intensity near EF of S- and Se-based compounds is remarkably suppressed, suggesting the strong scattering of electrons by the substitution of transition metals. In contrast, Te-based compound shows a clear Fermi edge. We discuss the origin of metal-semiconductor transition in terms of the strength of hybridization between chalcogen p band and transition metal d band.

本文言語English
ページ(範囲)633-637
ページ数5
ジャーナルJournal of Electron Spectroscopy and Related Phenomena
144-147
DOI
出版ステータスPublished - 2005 6

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 放射線
  • 原子分子物理学および光学
  • 凝縮系物理学
  • 分光学
  • 物理化学および理論化学

フィンガープリント

「High-resolution angle-resolved photoemission study of layered transition-metal dichalcogenides Nb<sub>1-x</sub>Ti<sub>x</sub>Xc<sub>2</sub> (Xc = S, Se, Te)」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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