High Reliability of Nanometer-Range N2O-Nitrided Oxides Due to Suppressing Hole Injection

K. Kobayashi; A. Teramoto; T. Nakamura; H. Watanabe; H. Kurokawa; Y. Matsui; M. Hirayama

doi:10.1109/IEDM.1996.553597

High Reliability of Nanometer-Range N₂O-Nitrided Oxides Due to Suppressing Hole Injection

K. Kobayashi, A. Teramoto, T. Nakamura, H. Watanabe, H. Kurokawa, Y. Matsui, M. Hirayama

研究成果: Conference article › 査読

9 被引用数 (Scopus)

抄録

Hole transport and trapping in N₂O-nitrided oxides have been studied. It is shown that N₂O-nitridation of oxides suppresses hole injection into the oxides. The suppression of hole injection is a mechanism leading to the enhancement of reliability of the nitrided oxides under channel hot-hole and F-N stresses.

本文言語	English
ページ（範囲）	335-338
ページ数	4
ジャーナル	Technical Digest - International Electron Devices Meeting, IEDM
DOI	https://doi.org/10.1109/IEDM.1996.553597
出版ステータス	Published - 1996
外部発表	はい
イベント	Proceedings of the 1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA 継続期間: 1996 12月 8 → 1996 12月 11

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
電子工学および電気工学
材料化学

文献へのアクセス

10.1109/IEDM.1996.553597

他のファイルとリンク

引用スタイル

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author = "K. Kobayashi and A. Teramoto and T. Nakamura and H. Watanabe and H. Kurokawa and Y. Matsui and M. Hirayama",

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AU - Kobayashi, K.

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AU - Watanabe, H.

AU - Kurokawa, H.

AU - Matsui, Y.

AU - Hirayama, M.

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AB - Hole transport and trapping in N2O-nitrided oxides have been studied. It is shown that N2O-nitridation of oxides suppresses hole injection into the oxides. The suppression of hole injection is a mechanism leading to the enhancement of reliability of the nitrided oxides under channel hot-hole and F-N stresses.

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