High-rate directional deep dry etching for bulk silicon micromachining

Masayoshi Esashi, Masao Takinami, Yuji Wakabayashi, Kazuyuki Minami

研究成果: Article査読

38 被引用数 (Scopus)

抄録

Cryogenic reactive ion etching (rie) of silicon using SF6 gas and a multilayer Ni/AI mask has been studied and high-rate, directional deep etching was demonstrated. The temperature of the cathode wafer stage was controlled at a low temperature (-60°C) and a magnetic field was applied to enhance the plasma density. A high flow rate (1 seem) of the etching gas and low pressure (0.5 Pa) produced by high-speed exhausting were effective for high-rate etching and directional etching. A trade-off of the rf power density was necessary between the etching rate and the etching selectivity to the mask with selectivity improving at higher etch rates. The system could be used to etch through a silicon wafer of 200 ¿¿m in thickness. An etching rate of 0.8 jum min-1 and vertical walls as thin as 20 ¡im were obtained in the through wafer etching. On the other hand, the etching rate was reduced in narrow deep grooves. This etching method is effective in fabricating three-dimensional silicon microstructures with high aspect ratio.

本文言語English
ページ(範囲)5-10
ページ数6
ジャーナルJournal of Micromechanics and Microengineering
5
1
DOI
出版ステータスPublished - 1995 3月

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 材料力学
  • 機械工学
  • 電子工学および電気工学

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