High-quality single crystal growth and Fermi surface properties in f-electron systems

Y. Onuki, R. Settai, H. Shishido, S. Ikeda, T. D. Matsuda, E. Yamamoto, Y. Haga, D. Aoki, H. Harima, H. Yamagami

研究成果: Article

2 引用 (Scopus)

抜粋

High-quality single crystals of rare earth and actinide compounds were grown by using several kinds of techniques such as the Czochralski method, flux method, chemical transport method and Bridgman method, together with purification of a uranium ingot by the solid state electrotransport method. For these single crystals, the de Haas-van Alphen experiment was carried out to clarify the Fermi surface properties, focusing on the quasi-two-dimensional electronic state of RTX5 (R: rare earth, T: transition metal, X: In and Ga) and AnTX5 (An: Th, U, Np and Pu), which were compared with the results of the energy band calculation.

元の言語English
ページ(範囲)1859-1866
ページ数8
ジャーナルJournal of Crystal Growth
310
発行部数7-9
DOI
出版物ステータスPublished - 2008 4 1

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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  • これを引用

    Onuki, Y., Settai, R., Shishido, H., Ikeda, S., Matsuda, T. D., Yamamoto, E., Haga, Y., Aoki, D., Harima, H., & Yamagami, H. (2008). High-quality single crystal growth and Fermi surface properties in f-electron systems. Journal of Crystal Growth, 310(7-9), 1859-1866. https://doi.org/10.1016/j.jcrysgro.2007.09.032