In this study, we present the results on silicon oxide films deposited using a Kr/O2/SiH4 high-density and low-ion-energy plasma at low temperature (400°C). The results demonstrate that the post-treatment using the Kr/O2 plasma can eliminate bulk traps related to hydroxylic groups in the films. The silicon oxide films deposited using the high-density low-ion-energy Kr/O2/SiH4 plasma exhibit excellent properties, e.g., low fixed charge density (4 × 1010 cm-2) and high breakdown electric field (>12 MV/cm) and high charge-to-breakdown. Those properties of the deposited films have approached the electrical characteristics of high temperature thermal oxide films. On a poly-Si substrate, a plasma enhanced chemical vapor deposition (PECVD) silicon oxide film that has a high breakdown field and low leakage current is also obtained.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||Published - 2003 4|
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