High-quality silicon oxide film formed by diffusion region plasma enhanced chemical vapor deposition and oxygen radical treatment using microwave-excited high-density plasma

Hiroaki Tanaka, Zhong Chuanjie, Yukio Hayakawa, Masaki Hirayama, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

研究成果: Article査読

24 被引用数 (Scopus)

抄録

In this study, we present the results on silicon oxide films deposited using a Kr/O2/SiH4 high-density and low-ion-energy plasma at low temperature (400°C). The results demonstrate that the post-treatment using the Kr/O2 plasma can eliminate bulk traps related to hydroxylic groups in the films. The silicon oxide films deposited using the high-density low-ion-energy Kr/O2/SiH4 plasma exhibit excellent properties, e.g., low fixed charge density (4 × 1010 cm-2) and high breakdown electric field (>12 MV/cm) and high charge-to-breakdown. Those properties of the deposited films have approached the electrical characteristics of high temperature thermal oxide films. On a poly-Si substrate, a plasma enhanced chemical vapor deposition (PECVD) silicon oxide film that has a high breakdown field and low leakage current is also obtained.

本文言語English
ページ(範囲)1911-1915
ページ数5
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
42
4 B
DOI
出版ステータスPublished - 2003 4

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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