High quality silicon epitaxy at 500°C using silane gas-source molecular beam technique

Fumihiko Hirose, Maki Suemitsu, Nobuo Miyamoto

研究成果: Article査読

44 被引用数 (Scopus)

抄録

High-quality silicon epitaxial films were successfully obtained at as low as 500°C using a SiH4 molecular beam technique in a UHV system. Perfect selective growth onto SiO2-patterned wafers, which allowed a precise measurement on epitaxial film thickness through the height of the step formed by the selective growth, was also observed. Detailed Arrhenius plots on the growth rate were thus obtained for the temperature range 500–800°C. The plots showed a break around 600°C, separating a lower- and a higher-temperature region with activation energies of 21 kcal/mol and 3.6 kcal/mol, respectively. Growth rate measurements with the silane pressure varied for 2.0, 3.0, and 4.0×10-4 Torr revealed first-order reaction kinetics for the lower-temperature region and a second-order nature for the higher-temperature region.

本文言語English
ページ(範囲)L2003-L2006
ジャーナルJapanese journal of applied physics
28
11 A
DOI
出版ステータスPublished - 1989 11月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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