High quality silicon epitaxy at 500°C using silane gas-source molecular beam technique

Fumihiko Hirose, Maki Suemitsu, Nobuo Miyamoto

研究成果: Article

43 引用 (Scopus)

抜粋

High-quality silicon epitaxial films were successfully obtained at as low as 500°C using a SiH4 molecular beam technique in a UHV system. Perfect selective growth onto SiO2-patterned wafers, which allowed a precise measurement on epitaxial film thickness through the height of the step formed by the selective growth, was also observed. Detailed Arrhenius plots on the growth rate were thus obtained for the temperature range 500–800°C. The plots showed a break around 600°C, separating a lower- and a higher-temperature region with activation energies of 21 kcal/mol and 3.6 kcal/mol, respectively. Growth rate measurements with the silane pressure varied for 2.0, 3.0, and 4.0×10-4 Torr revealed first-order reaction kinetics for the lower-temperature region and a second-order nature for the higher-temperature region.

元の言語English
ページ(範囲)L2003-L2006
ジャーナルJapanese journal of applied physics
28
発行部数11 A
DOI
出版物ステータスPublished - 1989 11

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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