High quality p-type ZnO film grown on ZnO substrate by nitrogen and tellurium co-doping

S. H. Park, T. Minegishi, J. S. Park, H. J. Lee, T. Taish, Ichiro Yonenaga, D. C. Oh, M. N. Jung, J. H. Chang, S. K. Hong, T. Yao

研究成果: Conference contribution

抄録

Nitrogen and tellurium co-doped ZnO (ZnO:[N+Te]) films have been grown on (0001) ZnO substrate by plasma-assisted molecular beam epitaxy. The electron concentration of tellurium doped ZnO (ZnO:Te) gradually increases, compared with that of undoped ZnO (u-ZnO). On the other hand, conductivity of ZnO:[N+Te] changes from n-type to p-type characteristic with a hole concentration of 4×1016 cm-3. However, nitrogen doped ZnO film (ZnO:N) still remains as n-type conductivity with an electron concentration of 2.5×1017 cm-3. Secondary ion mass spectroscopy reveals that nitrogen concentration ([N]) of ZnO:[N+Te] film (2×10 21 cm-3) is relatively higher than that of ZnO:N film (3×1020 cm-3). 10 K photoluminescence spectra show that considerable improvement of emission properties of ZnO:[N+Te] with an emergence of narrow acceptor bound exciton (A°X, 3.359 eV) and donor-acceptor pair (DAP, 3.217 eV), compared with those of u-ZnO. Consequently, high quality p-type ZnO with high N concentration is realized by using Te and N co-doping technique due to reduction of Madelung energy.

本文言語English
ホスト出版物のタイトルZinc Oxide and Related Materials - 2009
ページ127-133
ページ数7
出版ステータスPublished - 2010 7 1
イベント2009 MRS Fall Meeting - Boston, MA, United States
継続期間: 2009 11 302009 12 4

出版物シリーズ

名前Materials Research Society Symposium Proceedings
1201
ISSN(印刷版)0272-9172

Other

Other2009 MRS Fall Meeting
国/地域United States
CityBoston, MA
Period09/11/3009/12/4

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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