High-quality germanium dioxide thin films with low interface state density using a direct neutral beam oxidation process

Akira Wada, Rui Zhang, Shinichi Takagi, Seiji Samukawa

研究成果: Article査読

14 被引用数 (Scopus)

抄録

High-quality germanium dioxide (GeO 2) as a gate oxide is in high demand for use in future high mobility Ge-channel field-effect transistors. GeO 2 thin films were directly formed by using a damage-free and low-temperature process of neutral beam oxidation (NBO) after treatment with hydrogen (H) radicals. GeO 2 thin films (equivalent oxide thickness (EOT) 1.7 nm) with a high-quality interface and an extremely low interface state density (<1 × 10 11cm -2eV -1) could be formed even at low temperature (300 °C) by combining the H radical treatment, which resulted in the removal of native oxides, with the NBO process we developed.

本文言語English
論文番号213108
ジャーナルApplied Physics Letters
100
21
DOI
出版ステータスPublished - 2012 5月 21

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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