High-quality as-grown MgB2 thin-film fabrication at a low temperature using an in-plane-lattice near-matched epitaxial-buffer layer

O. Sakata, S. Kimura, M. Takata, S. Yata, T. Kato, K. Yamanaka, Y. Yamada, A. Matsushita, S. Kubo

研究成果: Article査読

11 被引用数 (Scopus)

抄録

The fabrication of an as-grown MgB2 crystalline thin film at a low temperature of 270°C was discussed. The fabrication was done using an in-plane-lattice near-matched TiZr buffer layer grown on a sapphire Al 2O3 (0001) surface. The critical temperature and the superconductivity critical current density of MgB2/TiZr/Al 2O3 was found to be higher than the MgB 2/Al2O3. The experiments show that the in-plane-lattice near-matched TiZr buffer layer served for the fabrication of the as-grown MgB2crystalline film.

本文言語English
ページ(範囲)3580-3582
ページ数3
ジャーナルJournal of Applied Physics
96
6
DOI
出版ステータスPublished - 2004 9 15
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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