High quality anatase Ti O2 film: Field-effect transistor based on anatase Ti O2

Masao Katayama, Shinya Ikesaka, Jun Kuwano, Hideomi Koinuma, Yuji Matsumoto

研究成果: Article査読

39 被引用数 (Scopus)

抄録

We proposed an oxygen modulation method for the growth of high crystalline and insulative anatase films. The cycle of deposition under low oxygen pressure and annealing under high oxygen pressure was repeated every 1 nm thick growth. The sharp reflection high-energy electron diffraction pattern and step-and-terrace surface morphology confirmed high crystallinity of the obtained anatase film; the resistivity reached as high as 1.8 M cm. As a result, the present anatase film exhibited high performance in a field-effect transistor as an active channel. On-to-off current ratio and field-effect mobility exceeded 105 and 0.3 cm2 V s, respectively.

本文言語English
論文番号132107
ジャーナルApplied Physics Letters
92
13
DOI
出版ステータスPublished - 2008
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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