High quality β-FeSi2 epitaxial film grown on hydrogen terminated Si (111) by molecular beam epitaxy

S. Y. Ji, G. M. Lalev, J. F. Wang, M. Uchikoshi, M. Isshiki

研究成果: Article査読

10 被引用数 (Scopus)

抄録

A high quality β-FeSi2 epitaxial film with the thickness of 180 nm has been successfully grown for the first time on hydrogen terminated Si (111) at 580 °C by using solid source molecular beam epitaxy (SS-MBE). The β-FeSi2 film grown with stoichiometric Fe / Si source flux ratio 1:2 has a superior morphology and crystallinity comparing to the published results of the films grown by other methods. X-ray diffraction (XRD) spectra confirmed that the obtained β-FeSi2 film was single crystal. Scanning electron microscope (SEM) images showed a good morphology with large flat surface areas of the obtained β-FeSi2 film.

本文言語English
ページ(範囲)2370-2373
ページ数4
ジャーナルMaterials Letters
59
18
DOI
出版ステータスPublished - 2005 8
外部発表はい

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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