TY - JOUR
T1 - High-performance ultra-small single crystalline silicon microphone of an integrated structure
AU - Tajima, T.
AU - Nishiguchi, T.
AU - Chiba, S.
AU - Morita, A.
AU - Abe, M.
AU - Tanioka, K.
AU - Saito, N.
AU - Esashi, M.
N1 - Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2003/6
Y1 - 2003/6
N2 - We have succeeded in fabricating an ultra-small condenser microphone that has excellent acoustic characteristics, and excellent reliability and mass-producibility, with an integrated structure made from single-crystalline silicon, a material that has high tensile strength. This is owing to the use of a bonded wafer, which is prepared using powder silicon oxide as a glue (SODIC method), and precise control of the thickness of the diaphragm, a thin film that vibrates under acoustic pressure. The microphone's acoustic characteristics are: wide dynamic range with excellent linearity up to 10 Pa, wide frequency range of 75 Hz-24 kHz, and high sensitivity of -47 dB (0 dB = 1 V/Pa). Since it is made of single-crystalline silicon, it is robust and thermally resistant. Moreover, it has suitability to mass production, because it is fabricated with a semiconductor process.
AB - We have succeeded in fabricating an ultra-small condenser microphone that has excellent acoustic characteristics, and excellent reliability and mass-producibility, with an integrated structure made from single-crystalline silicon, a material that has high tensile strength. This is owing to the use of a bonded wafer, which is prepared using powder silicon oxide as a glue (SODIC method), and precise control of the thickness of the diaphragm, a thin film that vibrates under acoustic pressure. The microphone's acoustic characteristics are: wide dynamic range with excellent linearity up to 10 Pa, wide frequency range of 75 Hz-24 kHz, and high sensitivity of -47 dB (0 dB = 1 V/Pa). Since it is made of single-crystalline silicon, it is robust and thermally resistant. Moreover, it has suitability to mass production, because it is fabricated with a semiconductor process.
KW - Bonded wafer
KW - Etch-stop
KW - Silicon MEMS
KW - Silicon microphone
UR - http://www.scopus.com/inward/record.url?scp=0038358319&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0038358319&partnerID=8YFLogxK
U2 - 10.1016/S0167-9317(03)00108-4
DO - 10.1016/S0167-9317(03)00108-4
M3 - Conference article
AN - SCOPUS:0038358319
VL - 67-68
SP - 508
EP - 519
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
T2 - Proceedings of the 28th International Conference on MNE
Y2 - 16 September 2002 through 19 September 2002
ER -