High-Performance Self-Aligned SiGeC HBT with Selectively Grown Si 1-x-yGexCy Base by UHV/CVD

Katsuya Oda, Eiji Ohue, Isao Suzumura, Reiko Hayami, Akihiro Kodama, Hiromi Shimamoto, Katsuyoshi Washio

研究成果: Article査読

10 被引用数 (Scopus)

抄録

Si1-x-yGexCy selective epitaxial growth (SEG) was performed by cold-wall, ultrahigh-vacuum chemical vapor deposition, and the effects of incorporating C on the crystallinity of Si 1-x-yGexCy layers and the performance of a self-aligned SiGeC heterojunction bipolar transistor (HBT) were evaluated. A Si1-x-yGexCy, layer with good crystallinity was obtained by optimizing the growth conditions. Device performance was significantly improved by incorporating C, as a result of applying Si 1-x-yGexCy SEG to form the base of a self-aligned HBT. Fluctuations in device performance were suppressed by alleviating the lattice strain. Furthermore, since the B out diffusion could be suppressed by incorporating C, the cutoff frequency was able to be increased with almost the same base resistance. A maximum oscillation frequency of 174 GHz and an emitter coupled logic gate-delay time of 5.65 ps were obtained at a C content of 0.4%, which shows promise for future ultrahigh-speed communication systems.

本文言語English
ページ(範囲)2213-2220
ページ数8
ジャーナルIEEE Transactions on Electron Devices
50
11
DOI
出版ステータスPublished - 2003 11月
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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