TY - JOUR
T1 - High-performance self-aligned graphene transistors fabricated using contamination-and defect-free process
AU - Park, Goon Ho
AU - Kim, Kwan Soo
AU - Fukidome, Hirokazu
AU - Suemitsu, Tetsuya
AU - Otsuji, Taiichi
AU - Cho, Won Ju
AU - Suemitsu, Maki
PY - 2016/6
Y1 - 2016/6
N2 - A contamination-and defect-free process is proposed for self-aligned graphene field-effect transistor (GFET) fabrication using a protective gold layer and by its etching. The gold layer serves as an electrode metal for both the source and drain. GFETs fabricated by this method exhibit superior electrical characteristics, such as an intrinsic carrier mobility of 8900 cm2V%1 s%1 and a series resistance of 1520m, which is ascribed to the effective blocking of unwanted contamination and defect formation as well as to the reduction in access length due to the self-aligned configuration. Our approach is quite promising as a device fabrication method for high-performance GFETs.
AB - A contamination-and defect-free process is proposed for self-aligned graphene field-effect transistor (GFET) fabrication using a protective gold layer and by its etching. The gold layer serves as an electrode metal for both the source and drain. GFETs fabricated by this method exhibit superior electrical characteristics, such as an intrinsic carrier mobility of 8900 cm2V%1 s%1 and a series resistance of 1520m, which is ascribed to the effective blocking of unwanted contamination and defect formation as well as to the reduction in access length due to the self-aligned configuration. Our approach is quite promising as a device fabrication method for high-performance GFETs.
UR - http://www.scopus.com/inward/record.url?scp=84974530343&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84974530343&partnerID=8YFLogxK
U2 - 10.7567/JJAP.55.06GF11
DO - 10.7567/JJAP.55.06GF11
M3 - Article
AN - SCOPUS:84974530343
VL - 55
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 6
M1 - 06GF11
ER -