High performance poly-Si thin film transistor with one-dimensionally long Si grains using DLB continuous-wave laser lateral crystallization

Masayuki Yamano, Shin Ichiro Kuroki, Tadashi Sato, Koji Kotani

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

One-dimensionally very large silicon grains with a length of over 100 μm were formed by continuous-wave laser crystallization with double-line spot. The laterally crystallized Si thin films have a preferential orientation of (110) plane. Poly-Si TFTs with one-dimensionally long silicon grains were also fabricated with low-temperature (550°C), metal gate self-aligned process. And high electron field effect mobility of 450 cm2/Vs was achieved.

本文言語English
ホスト出版物のタイトルProceedings of the 20th International Workshop on Active-Matrix Flatpanel Displays and Devices
ホスト出版物のサブタイトルTFT Technologies and FPD Materials, AM-FPD 2013
ページ199-202
ページ数4
出版ステータスPublished - 2013 11 22
イベント20th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2013 - Kyoto, Japan
継続期間: 2013 7 22013 7 5

出版物シリーズ

名前Proceedings of the 20th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2013

Other

Other20th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2013
CountryJapan
CityKyoto
Period13/7/213/7/5

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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