High performance poly Si junctionless transistors with sub-5nm conformally doped layers by molecular monolayer doping and microwave incorporating CO2 laser annealing for 3D stacked ICs applications

Yao Jen Lee, Ta Chun Cho, Po Jung Sung, Kuo Hsing Kao, Fu Kuo Hsueh, Fu Ju Hou, Po Cheng Chen, Hsiu Chih Chen, Chien Ting Wu, Shu Han Hsu, Yi Ju Chen, Yao Ming Huang, Yun Fang Hou, Wen Hsien Huang, Chih Chao Yang, Bo Yuan Chen, Kun Lin Lin, Min Cheng Chen, Chang Hong Shen, Guo Wei HuangKun Ping Huang, Michael I. Current, Yiming Li, Seiji Samukawa, Wen Fa Wu, Jia Min Shieh, Tien Sheng Chao, Wen Kuan Yeh

研究成果: Conference contribution

19 被引用数 (Scopus)

抄録

A junctionless (JL) fin thin film transistor (FinTFT) with a novel shell doping profile (SDP) formed by a damage-free conformal molecular monolayer doping (MLD) method and a combination of microwave annealing (MWA) and CO2 laser spike annealing (COLSA) is demonstrated and studied. MWA drives in and partially activates the MLD dopants; the resultant SDP features an ultra-shallow depth (< 5nm) and an abrupt steepness (< 0.8 nm/dec). The dopant activation of the devices experienced MLD and MWA is further enhanced by the nonmelting COLSA without dopant diffusion, and which can also avoid fin deformation and recover surface defects left by fin patterning. Thanks to the enhanced dopant activation by COLSA, the SDP-FinTFTs overall exhibit better performance than the SDP-FinTFTs without COLSA and the conventional implanted (imp) FinTFTs in terms of subthreshold swing (S.S.), on-currents (Ion by 160% compared to the SDP-FinTFTs without COLSA) and on/off current ratio (Ion/Ioff107) for 3D stacked ICs applications. Our results reveal the potential of the proposed SDP formed by MLD, MWA and COLSA enabling a JLFinTFT showing excellent performance.

本文言語English
ホスト出版物のタイトル2015 IEEE International Electron Devices Meeting, IEDM 2015
出版社Institute of Electrical and Electronics Engineers Inc.
ページ6.2.1-6.2.4
ISBN(電子版)9781467398930
DOI
出版ステータスPublished - 2015 2月 16
イベント61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, United States
継続期間: 2015 12月 72015 12月 9

出版物シリーズ

名前Technical Digest - International Electron Devices Meeting, IEDM
2016-February
ISSN(印刷版)0163-1918

Other

Other61st IEEE International Electron Devices Meeting, IEDM 2015
国/地域United States
CityWashington
Period15/12/715/12/9

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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