The improvement of current drivability and short channel effect is very important for ultrasmall MOS devices technology. SiGe-channel pMOSFETs are one of the most promising devices because hole mobility in the SiGe layers is enhanced. In the previous work, it has been reported that Super self-aligned shallow junction electrode (S3E) MOSFETs formed by selective B-doped SiGe CVD are effective for the suppression of short channel effect. In this paper, it is clarified that the (S3E) pMOSFETs with Si 0.65Ge0.35-channel are realized not only with suppression of punch through due to the ultrashallow B-diffused source/drain but also with enhancement of maximum linear transconductance due to the low parasitic resistance, compared to that with the Si-channel fabricated by the same process conditions.
|ジャーナル||IEEJ Transactions on Electronics, Information and Systems|
|出版ステータス||Published - 2006|
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