High-performance pMOSFETs with high Ge fraction strained SiGe-heterostructure channel and ultrashallow source/drain formed by selective B-doped SiGe CVD

Shinobu Takehiro, Masao Sakuraba, Junichi Murota, Toshiaki Tsuchiya

研究成果: Article査読

1 被引用数 (Scopus)

抄録

The improvement of current drivability and short-channel effect is very important for ultrasmall MOS device technology. SiGe-channel pMOSFETs are one of the most promising devices because hole mobility in the SiGe layers is enhanced. In the previous work, it has been reported that Super Self-aligned Shallow junction Electrode (S3E) MOSFETs formed by selective B-doped SiGe CVD are effective for the suppression of short-channel effect. In this paper, it is clarified that the (S3E) pMOSFETs with Si 0.65Ge0.35 channel are realized not only with suppression of punch-through due to the ultrashallow B-diffused source/drain but also with enhancement of maximum linear transconductance due to the low parasitic resistance, compared to that with the Si channel fabricated by the same process conditions.

本文言語English
ページ(範囲)46-50
ページ数5
ジャーナルElectrical Engineering in Japan (English translation of Denki Gakkai Ronbunshi)
165
3
DOI
出版ステータスPublished - 2008 11 30

ASJC Scopus subject areas

  • エネルギー工学および電力技術
  • 電子工学および電気工学

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