The improvement of current drivability and short-channel effect is very important for ultrasmall MOS device technology. SiGe-channel pMOSFETs are one of the most promising devices because hole mobility in the SiGe layers is enhanced. In the previous work, it has been reported that Super Self-aligned Shallow junction Electrode (S3E) MOSFETs formed by selective B-doped SiGe CVD are effective for the suppression of short-channel effect. In this paper, it is clarified that the (S3E) pMOSFETs with Si 0.65Ge0.35 channel are realized not only with suppression of punch-through due to the ultrashallow B-diffused source/drain but also with enhancement of maximum linear transconductance due to the low parasitic resistance, compared to that with the Si channel fabricated by the same process conditions.
|ジャーナル||Electrical Engineering in Japan (English translation of Denki Gakkai Ronbunshi)|
|出版ステータス||Published - 2008 11 30|
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