High-performance nonvolatile write-once-read-many-times memory devices with ZnO nanoparticles embedded in polymethylmethacrylate

Toan Thanh Dao, Thu Viet Tran, Koichi Higashimine, Hiromasa Okada, Derrick Mott, Shinya Maenosono, Hideyuki Murata

研究成果: Article査読

24 被引用数 (Scopus)

抄録

A mixture of ZnO nanoparticles and polymethylmethacrylate was used as an active layer in a nonvolatile resistive memory device. Current-voltage characteristics of the device showed nonvolatile write-once-read-many-times memory behavior with a switching time on the order of s. The device exhibited an on/off ratio of > 10 4, retention time of > 10 5s, and number of readout of 4 × 10 4 times under a read voltage of 0.5 V. The emission, cross-sectional high-resolution transmission electron microscopy (TEM), scanning TEM-high angle annular dark field imaging, and energy dispersive x-ray spectroscopy elemental mapping measurements suggest that the electrical switching originates from the formation of conduction paths.

本文言語English
論文番号233303
ジャーナルApplied Physics Letters
99
23
DOI
出版ステータスPublished - 2011 12月 5
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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