High-performance graphene field-effect transistors with extremely small access length using self-aligned source and drain technique

Myung Ho Jung, Goon Ho Park, Tomohiro Yoshida, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji, Maki Suemitsu

研究成果: Article査読

12 被引用数 (Scopus)

抄録

Self-aligned source/drain (S/D) graphene fieldeffect transistors (GFETs) with extremely small access lengths were successfully fabricated using a simple device fabrication processwithout sidewall spacer formation. The self-aligned S/D GFET exhibits superior electrical characteristics, such as the intrinsic carrier mobility of 6100 cm2/Vs, the gate leakage current of 10 -10-10-9 A and the contact resistance of 412 ωμm. In particular, a cutoff frequency of 13 GHz was achieved with a rather large gate length (LG = 3 μm), which demonstrates the promising future of this self-aligned GFET.

本文言語English
論文番号6517475
ページ(範囲)1603-1608
ページ数6
ジャーナルProceedings of the IEEE
101
7
DOI
出版ステータスPublished - 2013 1 1

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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