High-performance graphene field-effect transistors with extremely small access length using self-aligned source and drain technique

Self-aligned source/drain (S/D) graphene fieldeffect transistors (GFETs) with extremely small access lengths were successfully fabricated using a simple device fabrication processwithout sidewall spacer formation. The self-aligned S/D GFET exhibits superior electrical characteristics, such as the intrinsic carrier mobility of 6100 cm²/Vs, the gate leakage current of 10 ^-10-10^-9 A and the contact resistance of 412 ωμm. In particular, a cutoff frequency of 13 GHz was achieved with a rather large gate length (L_G = 3 μm), which demonstrates the promising future of this self-aligned GFET.