High performance bottom gate μc-Si TFT fabricated by low damage, high density plasma source

A. Hiroe, M. Hirayama, Y. Shirai, A. Teramoto, T. Ohmi

研究成果: Paper査読

1 被引用数 (Scopus)

抄録

Low damage and high density microwave (2.45GHz) plasma source called CMEP (Cellular Microwave Excited Plasma) has been developed. Uniform and large area microwave plasma is realized by this plasma, source. Investigation of μc-Si deposition trend and fabrication of bottom gate TFT have been done using microwave plasma CVD. Hydrogen plasma post-treatment has been found to be important for improving the TFT characteristics. Mobility of about 1.4cm 2/Vsec and on/off ratio of more than 105 is achieved after hydrogen plasma treatment.

本文言語English
ページ503-506
ページ数4
出版ステータスPublished - 2007 12 1
イベント14th International Display Workshops, IDW '07 - Sapporo, Japan
継続期間: 2007 12 52007 12 5

Other

Other14th International Display Workshops, IDW '07
国/地域Japan
CitySapporo
Period07/12/507/12/5

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 電子材料、光学材料、および磁性材料
  • 放射線学、核医学およびイメージング
  • 原子分子物理学および光学

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